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STGW50H65DFB2-4 Folha de dados (PDF) - STMicroelectronics
STGW50H65DFB2-4 Datasheet PDF - STMicroelectronics
Nome de Peças STGW50H65DFB2-4
Download  STGW50H65DFB2-4 Download
Tamanho do Arquivo   317.56 Kbytes
página   15 Pages
Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Descrição Electrónicos Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 package

STGW50H65DFB2-4 Datasheet (PDF)

Go To PDF Page Download Folha de dados
STGW50H65DFB2-4 Datasheet PDF - STMicroelectronics

Nome de Peças STGW50H65DFB2-4
Download  STGW50H65DFB2-4 Click to download

Tamanho do Arquivo   317.56 Kbytes
página   15 Pages
Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Descrição Electrónicos Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 package

STGW50H65DFB2-4 Folha de dados (HTML) - STMicroelectronics


STGW50H65DFB2-4 Detalhes do produto

Features
• Maximum junction temperature: TJ = 175 °C
• Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
• Very fast and soft recovery co-packaged diode
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient
• Excellent switching performance thanks to the extra driving kelvin pin

Applications
• Welding
• Power factor correction
• UPS
• Solar inverters
• Chargers

Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.




Nº de peça semelhante - STGW50H65DFB2-4

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1Mb / 12P		 50 A, 600 V field stop trench gate IGBT with Ultrafast diode
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Descrição semelhante - STGW50H65DFB2-4

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STGWA40HP65FB2 STMICROELECTRONICS-STGWA40HP65FB2 Datasheet
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STGWA50HP65FB2 STMICROELECTRONICS-STGWA50HP65FB2 Datasheet
542Kb / 15P		 Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads package
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STGWA75H65DFB2 STMICROELECTRONICS-STGWA75H65DFB2 Datasheet
560Kb / 15P		 Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package
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Sobre a STMicroelectronics

A STMicroelectronics é um fabricante multinacional de eletrônicos e semicondutores com sede em Genebra, Suíça.

A empresa oferece uma ampla gama de produtos, incluindo microcontroladores, sensores, amplificadores de energia e circuitos integrados para várias aplicações nos mercados automotivo, industrial e de consumo.

Fundada em 1987, a STMicroelectronics possui operações em mais de 100 países e é uma das maiores empresas de semicondutores do mundo.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.




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