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KM68512B Folha de dados(PDF) 6 Page - Samsung semiconductor

Nome de Peças KM68512B
Descrição Electrónicos  64Kx8 bit Low Power CMOS Static RAM
PDF  9 Pages
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Fabricante Electrônico  SAMSUNG [Samsung semiconductor]
Página de início  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM68512B Folha de dados(HTML) 6 Page - Samsung semiconductor

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Revision 0.0
KM68512B Family
CMOS SRAM
January 1998
6
Advance
Address
Data Out
Previous Data Valid
Data Valid
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
tAA
tRC
tOH
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Data Valid
High-Z
CS1
Address
OE
Data out
NOTES (READ CYCLE)
1.
tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
CS2
tOH
tAA
tOLZ
tLZ
tOHZ
tHZ(1,2)
tRC
tCO2
tOE
tCO1



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