KM68512B datasheet(4/9 Pages) SAMSUNG

4 / 9 page

Revision 0.0

KM68512B Family

CMOS SRAM

January 1998

Advance

RECOMMENDED DC OPERATING CONDITIONS 1)

Note

1. Commercial Product : TA=0 to 70

°C, unless otherwise specified

Industrial Product : TA=-40 to 85

°C, unless otherwise specified

2. Overshoot : VCC+3.0V in case of pulse width≤30ns

3. Undershoot : -3.0V in case of pulse width

≤30ns

4. Overshoot and undershoot is sampled, not 100% tested

Item

Symbol

Min

Typ

Max

Unit

Supply voltage

Vcc

4.5

5.0

5.5

Ground

Vss

Input high voltage

VIH

2.2

Vcc+0.5V2)

Input low voltage

VIL

-0.53)

0.8

CAPACITANCE 1)(f=1MHz, TA=25

°C)

1. Capacitance is sampled, not 100% tested

Item

Symbol

Test Condition

Min

Max

Unit

Input capacitance

CIN

VIN=0V

Input/Output capacitance

CIO

VIO=0V

DC AND OPERATING CHARACTERISTICS

1. Industrial product = 15

µA

Item

Symbol

Test Conditions

Min

Typ

Max Unit

Input leakage current

ILI

VIN=Vss to Vcc

-1

µA

Output leakage current

ILO

CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc

-1

µA

Operating power supply

ICC

IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIL or VIH, Read

Average operating current

ICC1

Cycle time=1§Á, 100% duty, IIO=0mA

CS1

≤0.2V, CS2≥VCC-0.2V, VIN≤0.2V or VIN≥Vcc -0.2V

Read

Write

ICC2

Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIL or VIH

Output low voltage

VOL

IOL=2.1mA

0.4

Output high voltage

VOH

IOH=-1.0mA

2.4

Standby Current(TTL)

ISB

CS1=VIH, CS2=VIL, Other inputs =VIL or VIH

Standby Current (CMOS)

ISB1

CS1

≥Vcc-0.2V, CS2≥Vcc-0.2V or CS2≤0.2V

101)

µA

KM68512B Folha de dados(PDF) 4 Page - Samsung semiconductor

KM68512B Folha de dados(HTML) 4 Page - Samsung semiconductor

Html Pages

1 2 3 4 5 6 7 8 9

Folha de dados Download

Ligação URL