Thermal and Mechanical Characteristics

Dynamic Characteristics

APT60GA60JD60

Symbol

Characteristic

Min

Typ

Max

Unit

R

θJC

Junction to Case Thermal Resistance (IGBT)

-

-

.35

°C/W

R

θJC

Junction to Case Thermal Resistance (Diode)

.60

W

T

Package Weight

-

29.2

-

g

V

Isolation

2500

Volts

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

C

ies

Input Capacitance

Capacitance

V

f = 1MHz

8010

pF

C

oes

Output Capacitance

714

C

res

Reverse Transfer Capacitance

74

Q

g

3

Total Gate Charge

Gate Charge

V

V

I

296

nC

Q

ge

Gate-Emitter Charge

106

Q

gc

Gate- Collector Charge

60

SSOA

Switching Safe Operating Area

T

4

, V

L= 100uH, V

178

A

t

d(on)

Turn-On Delay Time

Inductive Switching (25°C)

V

V

I

R

4

T

35

ns

t

r

Current Rise Time

49

t

d(off)

Turn-Off Delay Time

175

t

f

Current Fall Time

91

E

on2

Turn-On Switching Energy

1450

μJ

E

off

6

Turn-Off Switching Energy

1255

t

d(on)

Turn-On Delay Time

Inductive Switching (125°C)

V

V

I

R

4

T

33

ns

t

r

Current Rise Time

49

t

d(off)

Turn-Off Delay Time

214

t

f

Current Fall Time

119

E

on2

Turn-On Switching Energy

1995

μJ

E

off

6

Turn-Off Switching Energy

1760

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.

3 See Mil-Std-750 Method 3471.

4 R

5 E

clamping diode.

6 E

Microsemi reserves the right to change, without notice, the specifications and information contained herein.