APT60GA60JD60 datasheet(5/9 Pages) MICROSEMI

Nome de Peças	APT60GA60JD60

Descrição Electrónicos	High Speed PT IGBT

PDF	9 Pages

Scroll/Zoom	100%

Fabricante Electrônico	MICROSEMI [Microsemi Corporation]

Página de início	http://www.microsemi.com

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5 / 9 page

Typical Performance Curves

APT60GA60JD60

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

10-5

10 -4

10-3

10 -2

1.0

-1

100

200

300

400

500

100

1000

10000

0.3

D = 0.9

0.7

SINGLE PULSE

RECTANGULAR PULSE DURATION (SECONDS)

Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL

0.5

0.1

0.05

oes

res

ies

Peak TJ = PDM x ZθJC +TC

Duty Factor D =

t1/t

Note:

CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)

FIGURE 17, Capacitance vs Collector-To-Emitter Voltage

0.1

100

500

100

1000

CE, COLLECTOR-TO-EMITTER VOLTAGE

FIGURE 18, Minimum Switching Safe Operating Area

Dissipated Power

(Watts)

J (°C)

C (°C)

EXT are the external thermal

impedances: Case to sink,

sink to ambient, etc. Set to

zero when modeling only

the case to junction.

.0736

.2093

.0658

.0075

.3033

5.2132

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