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APT60GA60JD60 Folha de dados(PDF) 7 Page - Microsemi Corporation

Nome de Peças APT60GA60JD60
Descrição Electrónicos  High Speed PT IGBT
PDF  9 Pages
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Fabricante Electrônico  MICROSEMI [Microsemi Corporation]
Página de início  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT60GA60JD60 Folha de dados(HTML) 7 Page - Microsemi Corporation

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STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Symbol
Characteristic / Test Conditions
APT60GA60JD60
Unit
I
F(AV)
Maximum Average Forward Current (T
C = 92°C, Duty Cycle = 0.5)
60
Amps
I
F(RMS)
RMS Forward Current (Square wave, 50% duty)
79
I
FSM
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3 ms)
600
Symbol
Characteristic / Test Conditions
Min
Type
Max
Unit
V
F
Forward Voltage
I
F = 60A
1.7
Volts
I
F = 120A
2.0
I
F = 60A, TJ = 125°C
1.4
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
t
rr
Reverse Recovery Time
I
F = 1A,
di
F/dt = -100A/µs,
V
R = 30V, TJ = 25°C
-
160
-
ns
t
rr
Reverse Recovery Time
I
F
= 60A, di
F
/dt = -200A/µs
V
R
= 400V, T
C
= 25°C
-
70
-
Q
rr
Reverse Recovery Charge
-
100
-
nC
I
RRM
Maximum Reverse Recovery Current
-
4
-
Amps
t
rr
Reverse Recovery Time
I
F
= 60A, di
F
/dt = -200A/µs
V
R
= 400V, T
C
= 125°C
-
140
-ns
Q
rr
Reverse Recovery Charge
-
690
-
nC
I
RRM
Maximum Reverse Recovery Current
-
9
-
Amps
t
rr
Reverse Recovery Time
I
F
= 60A, di
F
/dt = -1000A/µs
V
R
= 400V, T
C
= 125°C
-
80
-
ns
Q
rr
Reverse Recovery Charge
-
1540
-nC
I
RRM
Maximum Reverse Recovery Current
-
31
-
Amps



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