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APT60GA60JD60 Folha de dados(PDF) 3 Page - Microsemi Corporation

Nome de Peças APT60GA60JD60
Descrição Electrónicos  High Speed PT IGBT
PDF  9 Pages
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Fabricante Electrônico  MICROSEMI [Microsemi Corporation]
Página de início  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT60GA60JD60 Folha de dados(HTML) 3 Page - Microsemi Corporation

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Typical Performance Curves
APT60GA60JD60
0
25
50
75
100
125
25
50
75
100
125
150
0
1
2
3
4
5
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
0
50
100 150
200 250 300
350
0
1
2
3
4
6
8
10
12
14
16
0
25
50
75
100
125
150
175
200
0
2
4
6
8
10
12
13
14
0
50
100
150
200
250
300
350
0
4
8
12
16
20
24
28
32
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
250μs PULSE
TEST<0.5 % DUTY
CYCLE
T
J = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
V
GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
I
C = 31A
I
C = 62A
I
C = 124A
I
C = 62A
I
C = 124A
13V
15V
I
C = 62A
T
J = 25°C
V
CE = 480V
V
CE = 300V
V
CE = 120V
T
J= 25°C
T
J= -55°C
V
GE = 15V
T
J= 55°C
T
J= 150°C
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T
J
= 25°C)
T
J= 25°C
T
J= 125°C
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T
J
= 25°C)
T
J= 125°C
V
GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
V
GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
GATE CHARGE (nC)
FIGURE 4, Gate charge
T
J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
T
C, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature
-50 -25
0
25
50 75
100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
T
J, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
6V
7V
8V
I
C = 31A
9V
10V
11V



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