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HD64F2149YV Folha de dados(PDF) 817 Page - Renesas Technology Corp |
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HD64F2149YV Folha de dados(HTML) 817 Page - Renesas Technology Corp |
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817 / 1075 page ![]() Section 25 Electrical Characteristics Rev. 3.00 Jan 18, 2006 page 789 of 1044 REJ09B0280-0300 tRSD2 φ T1 AS* A23 to A0, IOS* T2 tAH tACC3 tRDS D15 to D0 (read) T2 or T3 tAS T1 tASD tASD tRDH tAD RD (read) Note: * AS and IOS are the same pin. The function is selected by the IOSE bit in SYSCR. Figure 25.12 Burst ROM Access Timing (Two-State Access) |
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