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RA4T1 Folha de dados(PDF) 73 Page - Renesas Technology Corp |
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RA4T1 Folha de dados(HTML) 73 Page - Renesas Technology Corp |
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73 / 89 page ![]() Note 4. The reprogram/erase cycle is the number of erasures for each block. When the reprogram/erase cycle is n times (n = 10,000), erasing can be performed n times for each block. For example, when 128-byte programming is performed 64 times for different addresses in 8-KB blocks, and then the entire block is erased, the reprogram/erase cycle is counted as one. However, programming the same address several times as one erasure is not enabled. Overwriting is prohibited. Note 5. Time for resumption includes time for reapplying the erasing pulse (up to one full pulse) that was cut off at the time of suspension. Note 6. The reference value at VCC = 3.3V and room temperature. FACI command FSTATR.FRDY Programming pulse • Suspension during programming FACI command FSTATR.FRDY Erasure pulse • Suspension during erasure in suspend priority mode FACI command FSTATR.FRDY Erasure pulse • Suspension during erasure in erasure priority mode Program Suspend Ready Not Ready Ready Programming tSPD Erase Suspend Ready Not Ready Ready tSEED Erasing Erase Suspend Resume Suspend Ready Not Ready Ready Not Ready tSESD1 tSESD2 Erasing Erasing tFD • Forced Stop FACI command FSTATR.FRDY Forced Stop Not Ready Ready Resume tPRT Programming Resume tREST1 Ready Not Ready tREST2 Erasing Resume Not Ready tREET Erasing Figure 2.59 Suspension and forced stop timing for flash memory programming and erasure 2.11.2 Data Flash Memory Characteristics Table 2.45 Data flash memory characteristics (1 of 2) Conditions: Program or erase: FCLK = 4 to 50 MHz Read: FCLK ≤ 50 MHz Parameter Symbol FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 50 MHz Unit Test conditions Min Typ*6 Max Min Typ*6 Max Programming time 4-byte tDP4 — 0.36 3.8 — 0.16 1.7 ms 8-byte tDP8 — 0.38 4.0 — 0.17 1.8 16-byte tDP16 — 0.42 4.5 — 0.19 2.0 Erasure time 64-byte tDE64 — 3.1 18 — 1.7 10 ms 128-byte tDE128 — 4.7 27 — 2.6 15 256-byte tDE256 — 8.9 50 — 4.9 28 Blank check time 4-byte tDBC4 — — 84 — — 30 µs Reprogramming/erasure cycle*1 NDPEC 125000*2 — — 125000*2 — — — RA4T1 Datasheet 2. Electrical Characteristics R01DS0415EJ0140 Rev.1.40 May 29, 2026 Page 73 of 89 |
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