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T15M1024A-100N Folha de dados(PDF) 6 Page - Taiwan Memory Technology

Nome de Peças T15M1024A-100N
Descrição Electrónicos  128K X 8 LOW POWER CMOS STATIC RAM
PDF  13 Pages
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Fabricante Electrônico  TMT [Taiwan Memory Technology]
Página de início  http://www.tmtech.com.tw
Logo TMT - Taiwan Memory Technology

T15M1024A-100N Folha de dados(HTML) 6 Page - Taiwan Memory Technology

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TE
CH
tm
T15M1024A
TM Technology Inc. reserves the right
P. 6
Publication Date: OCT. 2004
to change products or specifications without notice.
Revision:C
AC CHARACTERISTICS
(Vcc= +5V / ±10%, Gnd = 0V, Ta = 0 ~ +70 °C /-40°C to 85°C)
(1) READ CYCLE
-45
-55
-70
-100
PARAMETER
SYM.
Min
Max
Min
Max
Min
Max
Min
Max
UNIT
Read Cycle Time
tRC
45
-
55
-
70
-
100
-
ns
Address Access Time
tAA
-
45
-
55
-
70
-
100
ns
Chip Enable Access Time
tACE
-
45
-
55
-
70
-
100
ns
Output Enable Access Time
tOE
-
22
-
25
-
35
-
50
ns
Output Hold from Address Change
tOH
10
-
10
-
10
-
10
-
ns
Chip Enable to Output in Low-Z
tLZ
7
-
10
-
10
-
10
-
ns
Chip Disable to Output in High-Z
tHZ
-
15
-
20
-
25
-
30
ns
Output Enable to Output in Low-Z
tOLZ
5
-
5
-
5
-
5
-
ns
Output Disable to Output in High-Z tOHZ
-
15
-
20
-
25
-
30
ns
(2)WRITE CYCLE
-45
-55
-70
-100
PARAMETER
SYM.
Min
Max
Min
Max
Min
Max
Min
Max
UNIT
Write Cycle Time
tWC
45
-
55
-
70
-
100
-
ns
Chip Enable to Write End
tCW
40
-
50
-
60
-
80
-
ns
Address Valid to Write End
tAW
40
-
50
-
60
-
80
-
ns
Address Setup Time
tAS
0
-
0
-
0
-
0
-
ns
Write Pulse Width
tWP
35
-
45
-
50
-
70
-
ns
Write Recovery Time
tWR
0
-
0
-
0
-
0
-
ns
Data Valid to Write End
tDW
20
-
25
-
30
-
40
-
ns
Data Hold Time
tDH
0
-
0
-
0
-
0
-
ns
Write Enable to Output in High-Z
tWHZ
-
15
-
20
-
25
-
30
ns
Output Active from Write End
tOW
5
-
5
-
5
-
5
-
ns



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