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T15M1024A-100N Folha de dados(PDF) 4 Page - Taiwan Memory Technology

Nome de Peças T15M1024A-100N
Descrição Electrónicos  128K X 8 LOW POWER CMOS STATIC RAM
PDF  13 Pages
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Fabricante Electrônico  TMT [Taiwan Memory Technology]
Página de início  http://www.tmtech.com.tw
Logo TMT - Taiwan Memory Technology

T15M1024A-100N Folha de dados(HTML) 4 Page - Taiwan Memory Technology

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TE
CH
tm
T15M1024A
TM Technology Inc. reserves the right
P. 4
Publication Date: OCT. 2004
to change products or specifications without notice.
Revision:C
OPERATING CHARACTERISTICS
(Vcc = +5V / ±10%, Gnd = 0V, Ta = 0 ~ +70
°C / -40°C ~ 85°C)
-45
-55
-70
-100
UNIT
PARAMETER
SYM.
TEST CONDITIONS
Min Max Min Max Min Max Min Max
Input Leakage
Current
I
LI
Vcc = Max,
VIN = Gnd to Vcc
-
1
-
1
-
1
-
1
uA
Output Leakage
Current
I
LO
CE1
= VIH or CE2= VIL
or OE = VIH
or WE = VIL
VOUT= Gnd to Vcc
-
1
-
1
-
1
-
1
uA
Operating Power
Supply Current
ICC
CE1
= VIL,CE2= VIH,
WE
=VIH, OE = VIH ,
VIN = VIH or VIL,
IOUT=0mA
-
2
-
2
-
2
-
2
mA
ICC1
Cycle time=1us,
100% duty, IOUT=0mA,
CE1
≤ 0.2V,
CE2
≥ V
CC-0.2V,
VIN ≤ 0.2V
-
3
-
3
-
3
-
3
mA
Average Operating
Current
ICC2
Cycle time=min,
100% duty, IOUT=0mA,
CE1
= VIL,CE2= VIH ,
VIN = VIH or VIL
-
42
-
40
-
35
-
25
mA
Standby Power
Supply Current
(TTL Level)
I
SB
CE1
=
V
IH
CE2= VIL
-
0.5
-
0.5
-
0.5
-
0.5
mA
0
to
70
°C
-
15
-
15
-
15
-
15
uA
Standby Power
Supply Current
(CMOS Level)
I
SB1
CE1
≥ Vcc-0.2V,
CE2
≥ V
CC-0.2V
or CE2
≤ 0.2V
VIN ≤ 0.2V or
VIN ≥ Vcc-0.2V
-40
to
85
°C
-
20
-
20
-
20
-
20
uA
Output Low Voltage
V
OL
I
OL = 2.1mA
-
0.4
-
0.4
-
0.4
-
0.4
V
Output High Voltage VOH
I
OH = -1.0 mA
2.4
-
2.4
-
2.4
-
2.4
-
V



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