P4C164L

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Document # SRAM116 REV B

Symbol

Parameter

Test Conditions

Max

Unit

C

IN

C

OUT

Input Capacitance

Output Capacitance

V

V

7

9

pF

pF

Symbol

Parameter

-80

Min

Max

-100

Min

Max

Unit

t

RC

80

ns

t

AA

Address Access Time

80

100

ns

t

AC

Chip Enable Access

Time

80

100

ns

t

OH

Output Hold from

Address Change

10

10

ns

t

LZ

Chip Enable to

Output in Low Z

10

10

ns

t

HZ

Chip Disable to

Output in High Z

30

30

ns

t

OE

Output Enable Low

to Data Valid

40

40

ns

t

OLZ

Output Enable Low to

Low Z

55

ns

t

OHZ

Output Enable High

to High Z

20

20

ns

t

PU

Chip Enable to Power

Up Time

00

ns

t

PD

Chip Disable to Power

Down Time

80

100

ns

Read Cycle Time

(V

AC ELECTRICAL CHARACTERISTICS - READ CYCLE

(Over Recommended Operating Temperature & Supply Voltage)

*Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.

The device is continuously enabled for writing, i.e.

CE and WE

OE is high. Switching

inputs are 0V and 3V.

POWER DISSIPATION CHARACTERISTICS VS. SPEED

Symbol

Parameter

Unit

I

CC

Dynamic Operating Current

Ind. & Comm.

55

55

mA

-80

-100

Temperature Range

*

100