P4C164L-100P3CLF datasheet(1/11 Pages) PYRAMID

Nome de Peças	P4C164L-100P3CLF

Descrição Electrónicos	LOW POWER 8K x 8 STATIC CMOS RAM

PDF	11 Pages

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Fabricante Electrônico	PYRAMID [Pyramid Semiconductor Corporation]

Página de início	http://www.pyramidsemiconductor.com

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1

Document # SRAM116 REV B

Revised June 2007

V

CC Current (Commercial/Industrial)

— Operating: 55 mA

— CMOS Standby: 3 µA

Access Times

—80/100 (Commercial or Industrial)

Single 5 Volts ±10% Power Supply

Easy Memory Expansion Using CE

1, CE2 and OE

OE

Inputs

Memory locations are specified on address pins A

0 to

A

12. Reading is accomplished by device selection (CE

1

low CE

2 high) and output enabling (OE) while write en-

able (

WE) remains HIGH. By presenting the address

under these conditions, the data in the addressed memory

location is presented on the data input/output pins. The

input/output pins stay in the HIGH Z state when either

CE

1 or OE is HIGH or WE or CE2 is LOW.

Package options for the P4C164L include 28-pin 300 and

600 mil DIP and 28-pin 330 mil SOP packages.

P4C164L

LOW POWER 8K x 8

STATIC CMOS RAM

Common Data I/O

Three-State Outputs

Fully TTL Compatible Inputs and Outputs

Advanced CMOS Technology

Automatic Power Down

Packages

—28-Pin 300 and 600 mil DIP

—28-Pin 330 mil SOP

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATION

DESCRIPTION

The P4C164L device provides asynchronous operation

with matching access and cycle times.

FEATURES

The P4C164L is a 64K density low power CMOS

static RAM organized as 8Kx8. The CMOS memory

requires no clocks or refreshing, and has equal access

and cycle times. Inputs are fully TTL-compatible. The

RAM operates from a single 5V±10% tolerance power

supply.

Access times of 80 ns and 100 ns are available. CMOS

is utilized to reduce power consumption to a low level.

DIP (P5, P6), SOP (S5)

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Nº de peça semelhante - P4C164L-100P3CLF

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Pyramid Semiconductor C...	P4C164LL	895Kb / 10P	VERY LOW POWER 8Kx8 STATIC CMOS RAM
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