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P4C164L-100P3CLF Folha de dados(PDF) 4 Page - Pyramid Semiconductor Corporation

Nome de Peças P4C164L-100P3CLF
Descrição Electrónicos  LOW POWER 8K x 8 STATIC CMOS RAM
PDF  11 Pages
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Fabricante Electrônico  PYRAMID [Pyramid Semiconductor Corporation]
Página de início  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C164L-100P3CLF Folha de dados(HTML) 4 Page - Pyramid Semiconductor Corporation

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P4C164L
Page 4 of 11
Document # SRAM116 REV B
READ CYCLE NO. 1 (
OE
OE
OE
OE
OE CONTROLLED)(1)
NOTES:
READ CYCLE NO. 2 (ADDRESS CONTROLLED)
READ CYCLE NO. 3 (
CE
CE
CE
CE
CE
1,CE2 CONTROLLED)
Notes:
5.
WE is HIGH for READ cycle.
6.
CE
1 is LOW, CE2 is HIGH and OE is LOW for READ cycle.
7. ADDRESS must be valid prior to, or coincident with
CE
1 transition LOW
and CE
2 transition HIGH.
8. Transition is measured ± 200 mV from steady state voltage prior to
change, with loading as specified in Figure 1. This parameter is
sampled and not 100% tested.
9. READ Cycle Time is measured from the last valid address to the first
transitioning address.
10. Transitions caused by a chip enable control have similar delays
irrespective of whether
CE
1 or CE2 causes them.



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