P4C164L-100P3CLF datasheet(5/11 Pages) PYRAMID

Nome de Peças	P4C164L-100P3CLF

Descrição Electrónicos	LOW POWER 8K x 8 STATIC CMOS RAM

PDF	11 Pages

Scroll/Zoom	100%

Fabricante Electrônico	PYRAMID [Pyramid Semiconductor Corporation]

Página de início	http://www.pyramidsemiconductor.com

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5 / 11 page

P4C164L

Page 5 of 11

Document # SRAM116 REV B

AC CHARACTERISTICS - WRITE CYCLE

(Over Recommended Operating Temperature & Supply Voltage)

WRITE CYCLE NO. 1 (

WE CONTROLLED)(6)

Symbol

Parameter

-80

Max

-100

Max

Unit

Min

Write Cycle Time

100

Chip Enable Time

to End of Write

Address Valid to

End of Write

Address Set-up

Time

Write Pulse Width

Address Hold Time

Data Valid to End

of Write

Data Hold Time

Write Enable to

Output in High Z

Output Active from

End of Write

Notes:

11.

1 and WE must be LOW, and CE2 HIGH for WRITE cycle.

12.

OE is LOW for this WRITE cycle to show t

WZ and tOW.

13. If

1 goes HIGH, or CE2 goes LOW, simultaneously with WE HIGH,

the output remains in a high impedance state.

14. Write Cycle Time is measured from the last valid address to the first

transitioning address.

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