BUT12F datasheet(4/12 Pages) PHILIPS

4 / 12 page

1997 Aug 13

Philips Semiconductors

Product speciﬁcation

Silicon diffused power transistors

BUT12F; BUT12AF

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. Measured with a half-sinewave voltage (curve tracer).

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCEOsust

collector-emitter sustaining voltage

IC = 100 mA; IBoff = 0; L = 25 mH;

see Figs 5 and 6

BUT12F

400

−−

BUT12AF

450

−−

VCEsat

collector-emitter saturation voltage

BUT12F

IC = 6 A; IB = 1.2 A; see

Figs 7 and 9

−−

1.5

BUT12AF

IC = 5 A; IB = 1 A; see

Figs 7 and 9

−−

1.5

VBEsat

base-emitter saturation voltage

BUT12F

IC = 6 A; IB = 1.2 A; see Fig.7

−−

1.5

BUT12AF

IC = 5 A; IB = 1 A; see Fig.7

−−

1.5

ICES

collector-emitter cut-off current

VCE =VCESMmax; VBE = 0; note 1

−−

1mA

VCE =VCESMmax; VBE =0;

Tj = 125 °C; note 1

−−

3mA

IEBO

emitter-base cut-off current

VEB =9V; IC =0

−−

hFE

DC current gain

VCE =5V; IC = 10 mA; see Fig.10 10

VCE =5V; IC = 1 A; see Fig.10

Switching times resistive load (see Fig.12)

ton

turn-on time

BUT12F

ICon = 6 A; IBon = −IBoff = 1.2 A

−−

µs

BUT12AF

ICon = 5 A; IBon = −IBoff =1A

−−

µs

storage time

BUT12F

ICon = 6 A; IBon = −IBoff = 1.2 A

−−

µs

BUT12AF

ICon = 5 A; IBon = −IBoff =1A

−−

µs

fall time

BUT12F

ICon = 6 A; IBon = −IBoff = 1.2 A

−−

0.8

µs

BUT12AF

ICon = 5 A; IBon = −IBoff =1A

−−

0.8

µs

Switching times inductive load (see Fig.14)

storage time

BUT12F

ICon = 6 A; IBon = 1.2 A;

VCL = 250 V; Tc = 100 °C

−

1.9

2.5

µs

BUT12AF

ICon = 5 A; IBon =1A;

VCL = 300 V; Tc = 100 °C

−

1.9

2.5

µs

fall time

BUT12F

ICon = 6 A; IBon = 1.2 A;

VCL = 250 V; Tc = 100 °C

−

200

300

BUT12AF

ICon = 5 A; IBon =1A;

VCL = 300 V; Tc = 100 °C

−

200

300

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