1997 Aug 13

6

Philips Semiconductors

Product specification

Silicon diffused power transistors

BUT12F; BUT12AF

Fig.7 Base-emitter and collector-emitter saturation voltages as functions of base current; typical values.

handbook, full pagewidth

0

2.0

MGB914

1

IC (A)

VBEsat

VCEsat

(V)

10

0.5

1.5

1.0

(1)

(2)

(4)

(3)

Fig.8 Base-emitter voltage as a function of collector current; typical values.

handbook, full pagewidth

3

IB (A)

1.6

1.4

0.8

0

0.5

VBE

(V)

MGB911

1.2

1.0

2

2.5

1

1.5

(1)

(2)

(3)