1997 Aug 13

2

Philips Semiconductors

Product specification

Silicon diffused power transistors

BUT12F; BUT12AF

THERMAL CHARACTERISTICS

Notes

1. Mounted without heatsink compound and 30

±5 N force on centre of package.

2. Mounted with heatsink compound and 30

±5 N force on centre of package.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Mounted without heatsink compound and 30

±5 N force on centre of package.

ISOLATION CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to external heatsink note 1

5.5

K/W

note 2

3.9

K/W

thermal resistance from junction to ambient

55

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-emitter peak voltage

BUT12F

−

850

V

BUT12AF

−

1000

V

collector-emitter voltage

open base

BUT12F

−

400

V

BUT12AF

−

450

V

collector saturation current

BUT12F

−

6A

BUT12AF

−

5A

collector current (DC)

see Figs 2 and 4

−

8A

collector current (peak value)

see Fig.2

−

20

A

base current (DC)

−

4A

base current (peak value)

−

6A

total power dissipation

−

23

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

isolation voltage from all terminals to external heatsink (peak value)

−

1500

V

isolation capacitance from collector to external heatsink

−

12

pF