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BUT12F Folha de dados(PDF) 6 Page - NXP Semiconductors |
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BUT12F Folha de dados(HTML) 6 Page - NXP Semiconductors |
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6 / 12 page ![]() 1997 Aug 13 5 Philips Semiconductors Product specification Silicon diffused power transistors BUT12F; BUT12AF Fig.3 Power derating curve. handbook, halfpage 050 Th ( oC) 100 150 120 0 40 80 MGK674 Ptot max (%) Fig.4 Reverse bias SOAR. VBE = −1to −5 V; Tmb = 100 °C. handbook, halfpage 10 0 400 IC (A) 1200 VCE (V) 0 MGB892 800 5 BUT12F BUT12AF Fig.5 Test circuit for collector-emitter sustaining voltage. handbook, halfpage MGE252 + 50 V 100 to 200 Ω 30 to 60 Hz L 6 V oscilloscope vertical horizontal 1 Ω 300 Ω Fig.6 Oscilloscope display for collector-emitter sustaining voltage. handbook, halfpage MGE239 IC (mA) 250 200 100 0 min VCEOsust VCE (V) |
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