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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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IC42S16100 Folha de dados(PDF) 7 Page - Integrated Circuit Solution Inc |
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IC42S16100 Folha de dados(HTML) 7 Page - Integrated Circuit Solution Inc |
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7 / 78 page  IC42S16100 Integrated Circuit Solution Inc. 7 DR024-0D 06/25/2004 AC CHARACTERISTICS(1,2,3) -5 -6 -7 Symbol Parameter Min. Max. Min. Max. Min. Max Units tCK3 Clock Cycle Time CAS Latency = 3 5 — 6 — 7 — ns tCK2 CAS Latency = 2 7 — 8 — 8.6 — ns tAC3 Access Time From CLK(4) CAS Latency = 3 — 4.5 — 5.5 — 6 ns tAC2 CAS Latency = 2 — 5 — 6 — 6 ns tCHI CLK HIGH Level Width 2 — 2 — 2.5 — ns tCL CLK LOW Level Width 2 — 2 — 2.5 — ns tOH Output Data Hold Time 2 — 2 — 2 — ns tLZ Output LOW Impedance Time 0 — 0 — 0 — ns tHZ3 Output HIGH Impedance Time(5) CAS Latency = 3 — 4.5 — 5.5 — 6 ns tHZ2 CAS Latency = 2 — 5 — 6 — 6 ns tDS Input Data Setup Time 2 — 2 — 2 — ns tDH Input Data Hold Time 1 — 1 — 1 — ns tAS Address Setup Time 2 — 2 — 2 — ns tAH Address Hold Time 1 — 1 — 1 — ns tCKS CKE Setup Time 2 — 2 — 2 — ns tCKH CKE Hold Time 1 — 1 — 1 — ns tCKA CKE to CLK Recovery Delay Time 1CLK+3 — 1CLK+3 — 1CLK+3 — ns tCS Command Setup Time (CS, RAS, CAS, WE, DQM) 2 — 2 — 2 — ns tCH Command Hold Time (CS, RAS, CAS, WE, DQM) 1 — 1 — 1 — ns tRC Command Period (REF to REF / ACT to ACT) 50 — 60 — 70 — ns tRAS Command Period (ACT to PRE) 30 100,000 36 100,000 42 100,000 ns tRP Command Period (PRE to ACT) 15 — 18 — 21 — ns tRCD Active Command To Read / Write Command Delay Time 15 — 18 — 21 — ns tRRD Command Period (ACT [0] to ACT[1]) 10 — 12 — 14 — ns tDPL Input Data To Precharge 2CLK — 2CLK — 2CLK — ns Command Delay time tDAL Input Data To Active / Refresh 2CLK+tRP — 2CLK+tRP — 2CLK+tRP —ns Command Delay time (During Auto-Precharge) tT Transition Time 1 10 1 10 1 10 ns tREF Refresh Cycle Time (4096) — 64 — 64 — 64 ms Notes: 1. When power is first applied, memory operation should be started 100 µs after Vcc and VccQ reach their stipulated voltages. Also note that the power-on sequence must be executed before starting memory operation. 2. Measured with tT = 1 ns. 3. The reference level is 1.4 V when measuring input signal timing. Rise and fall times are measured between VIH (min.) and VIL (max.). 4. Access time is measured at 1.4V with the load shown in the figure below. 5. The time tHZ (max.) is defined as the time required for the output voltage to transition by ± 200 mV from VOH (min.) or VOL (max.) when the output is in the high impedance state. |
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