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IC42S16100 Folha de dados(PDF) 31 Page - Integrated Circuit Solution Inc

Nome de Peças IC42S16100
Descrição Electrónicos  512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
PDF  78 Pages
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Fabricante Electrônico  ICSI [Integrated Circuit Solution Inc]
Página de início  http://www.icsi.com.tw
Logo ICSI - Integrated Circuit Solution Inc

IC42S16100 Folha de dados(HTML) 31 Page - Integrated Circuit Solution Inc

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IC42S16100
Integrated Circuit Solution Inc.
31
DR024-0D 06/25/2004
CAS latency = 2, 3, burst length = 4
Write Cycle Interruption Using the
Precharge Command
A write cycle can be interrupted by the execution of the
precharge command before that cycle completes. The
delay time (tWDL) from the precharge command to the point
where burst input is invalid, i.e., the point where input data
is no longer written to device internal memory is zero clock
cycles regardless of the CAS.
To inhibit invalid write, the DQM signal must be asserted
HIGH with the precharge command.
This precharge command and burst write command must
be of the same bank, otherwise it is not precharge interrupt
but only another bank precharge of dual bank operation.
PRE 0
WRITE A0
COMMAND
DQM
I/O
CLK
DIN A0
DIN A1
DIN A2
DIN A3
tWDL=0
WRITE (CA=A, BANK 0)
PRECHARGE (BANK 0)
MASKED BY DQM
PRE 0
WRITE A0
COMMAND
I/O
CLK
DIN A0
DIN A1
DIN A2
DIN A3
tDPL
WRITE (CA=A, BANK 0)
PRECHARGE (BANK 0)
CAS
CAS
CAS
CAS
CAS Latency
3
2
tWDL
00
tDPL
11
Inversely, to write all the burst data to the device, the
precharge command must be executed after the write data
recovery period (tDPL) has elapsed. Therefore, the
precharge command must be executed on one clock cycle
that follows the input of the last burst data item.
CAS latency = 2, 3, burst length = 4



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