Si5350B

Rev. 0.9

7

Parameter

Symbol

Min

Typ

Max

Unit

Crystal Frequency

—27—

MHz

Load Capacitance

6TBD

12

pF

Equivalent Series Resistance

——

150



Crystal Max Drive Level Spec

——

100

µW

Notes:

1. Crystals which require load capacitances of 6, 8, or 10 pF should use the device’s internal load capacitance for

optimum performance. See register 183 bits 7:6. A crystal with a 12 pF load capacitance requirement should use a

combination of the internal 10 pF load capacitors in addition to external 2 pF load capacitors. Adding external 2 pF load

capacitors can minimize jitter by 20%.

2. Refer to “AN551: Crystal Selection Guide” for more details.

Table 8. Thermal Characteristics

Parameter

Symbol

Test Condition

Package

Value

Unit

Thermal Resistance Junc-

tion to Ambient



JA

Still Air

10-MSOP

131

°C/W

24-QSOP

80

°C/W

20-QFN

51

°C/W

Thermal Resistance Junc-

tion to Case



JC

Still Air

10-MSOP

43

°C/W

24-QSOP

31

°C/W

20-QFN

16

°C/W

Table 9. Absolute Maximum Ratings

Parameter

Symbol

Test Condition

Value

Unit

DC Supply Voltage

–0.5 to 3.8

V

Input Voltage

VIN_P0-3

Pins P0, P1, P2, P3

–0.5 to 3.8

V

VIN_VC

VC

–0.5 to (VDD+0.3)

V

VIN_XA/

B

Pins XA, XB

–0.5 to 1.3 V

V

Temperature Range

–55 to 150

°C

Note: Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be

restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.