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Hello, Please ask a question about P4C164LL-100CWCLF Datasheet
# Example questions:
➢ What is the purpose of adding a 0.01 µf capacitor between vcc and ground during testing, as described in the 'note' section on page 6?
➢ What input rise and fall times are used for testing the device?
➢ What is the typical data retention current (iccdr) when vcc is 0v?
This document is a datasheet for the Cypress Semiconductor (now Infineon) P4C164LL, a very low power 8K x 8 static CMOS RAM. Here's a breakdown of the key information it provides:
Key Features & Specs:
️· Capacity: 8K x 8 bits (64K bits)
️· Power Consumption: Very low power, designed for battery-powered applications. Specific current values are provided for active and standby modes. Notably includes data retention current specs.
️· Access Time: Performance characteristics (timing diagrams and values) are provided for read and write cycles.
️· Operating Voltage: Typically 3.0V, but operates down to 2.0V for data retention.
️· Data Retention Voltage: 2.0V
️· Operating Temperature: Industrial and Military temperature ranges are supported.
️· Technology: Static CMOS RAM (no need for refreshing)
Detailed Information Included:
️· Electrical Characteristics: DC and AC specifications, input/output load conditions, and timing parameters.
️· Functional Description: Describes the operation of the RAM, including read/write cycles, chip select, and output enable.
️· Timing Diagrams: Illustrates the timing relationships for various operations.
️· Package Information: Detailed dimensions and specifications for multiple package types (PDIP, SOIC, SOP, Ceramic DIP) including pinouts.
️· Data Retention Information: Specifications regarding the voltage and current required to maintain data when power is off.
️· Ordering Information: How to order the part with different package options
️· Revision History: A history of changes made to the datasheet.
Key takeaway: This document is a comprehensive technical reference for engineers designing systems that use the P4C164LL static RAM. It provides all the necessary electrical and mechanical specifications to ensure proper integration and operation.
Key Features & Specs:
️· Capacity: 8K x 8 bits (64K bits)
️· Power Consumption: Very low power, designed for battery-powered applications. Specific current values are provided for active and standby modes. Notably includes data retention current specs.
️· Access Time: Performance characteristics (timing diagrams and values) are provided for read and write cycles.
️· Operating Voltage: Typically 3.0V, but operates down to 2.0V for data retention.
️· Data Retention Voltage: 2.0V
️· Operating Temperature: Industrial and Military temperature ranges are supported.
️· Technology: Static CMOS RAM (no need for refreshing)
Detailed Information Included:
️· Electrical Characteristics: DC and AC specifications, input/output load conditions, and timing parameters.
️· Functional Description: Describes the operation of the RAM, including read/write cycles, chip select, and output enable.
️· Timing Diagrams: Illustrates the timing relationships for various operations.
️· Package Information: Detailed dimensions and specifications for multiple package types (PDIP, SOIC, SOP, Ceramic DIP) including pinouts.
️· Data Retention Information: Specifications regarding the voltage and current required to maintain data when power is off.
️· Ordering Information: How to order the part with different package options
️· Revision History: A history of changes made to the datasheet.
Key takeaway: This document is a comprehensive technical reference for engineers designing systems that use the P4C164LL static RAM. It provides all the necessary electrical and mechanical specifications to ensure proper integration and operation.
| Part No. | P4C164LL-100CWCLF |
| Manufacturer | PYRAMID |
| Size | 895 Kbytes |
| Pages | 10 pages |
| Description | VERY LOW POWER 8Kx8 STATIC CMOS RAM |
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