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P4C164L-100P3CLF Datasheet with Chat AI
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  • Part No.P4C164L-100P3CLF
    ManufacturerPYRAMID
    Size112 Kbytes
    Pages11 pages
    DescriptionLOW POWER 8K x 8 STATIC CMOS RAM
    Datasheet Summary with AI

    This document is a datasheet for the Cypress P4C164L, a low-power 8K x 8 static CMOS RAM. Here's a summary of the key information:

    Key Features:

    ️· Capacity: 8K x 8 (64K bits)
    ️· Technology: Static CMOS
    ️· Power: Low power consumption
    ️· Operation: Single 3.3V or 5V supply
    ️· Speed: Available in 80ns and 100ns access times
    ️· Packages: Plastic DIP (300mil & 600mil) and Plastic SOP (450mil)
    ️· Operating Temperature: Commercial and Industrial temperature ranges
    ️· Data Retention: Functions with VCC as low as 2.0V.
    ️· Write Cycle: Byte write capability

    Important Electrical Characteristics:

    ️· VCC: 3.3V or 5V
    ️· Access Time: 80ns or 100ns
    ️· Operating Current: (varies based on speed & VCC)
    ️· Standby Current: Very low standby current


    Key Sections in the Datasheet:

    ️· Functional Description: Explains the RAM's operation.
    ️· DC Characteristics: Defines voltage and current requirements.
    ️· Timing Diagrams: Illustrates read and write timing.
    ️· AC Characteristics: Specifies AC timing parameters.
    ️· Package Information: Provides dimensions for different packages.
    ️· Ordering Information: Lists available part numbers.
    ️· Data Retention Characteristics: Information regarding data retention with minimal voltage applied.

    Overall:

    The datasheet provides all the necessary information for engineers to properly design and use the P4C164L in their applications. It includes electrical characteristics, timing diagrams, and package information to ensure successful implementation.

    Key Features:

    ️· Capacity: 8K x 8 (64K bits)
    ️· Technology: Static CMOS
    ️· Power: Low power consumption
    ️· Operation: Single 3.3V or 5V supply
    ️· Speed: Available in 80ns and 100ns access times
    ️· Packages: Plastic DIP (300mil & 600mil) and Plastic SOP (450mil)
    ️· Operating Temperature: Commercial and Industrial temperature ranges
    ️· Data Retention: Functions with VCC as low as 2.0V.
    ️· Write Cycle: Byte write capability

    Important Electrical Characteristics:

    ️· VCC: 3.3V or 5V
    ️· Access Time: 80ns or 100ns
    ️· Operating Current: (varies based on speed & VCC)
    ️· Standby Current: Very low standby current

    Key Sections in the Datasheet:

    ️· Functional Description: Explains the RAM's operation.
    ️· DC Characteristics: Defines voltage and current requirements.
    ️· Timing Diagrams: Illustrates read and write timing.
    ️· AC Characteristics: Specifies AC timing parameters.
    ️· Package Information: Provides dimensions for different packages.
    ️· Ordering Information: Lists available part numbers.
    ️· Data Retention Characteristics: Information regarding data retention with minimal voltage applied.

    Overall:

    The datasheet provides all the necessary information for engineers to properly design and use the P4C164L in their applications. It includes electrical characteristics, timing diagrams, and package information to ensure successful implementation.

    Part No.P4C164L-100P3CLF
    ManufacturerPYRAMID
    Size112 Kbytes
    Pages11 pages
    DescriptionLOW POWER 8K x 8 STATIC CMOS RAM
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