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Hello, Please ask a question about P4C164L-100P3CLF Datasheet
# Example questions:
➢ What is the typical data retention current (iccdr) when ce1 ≥ vcc– 0.2v or ce2 ≤ 0.2v with vin≥ vcc– 0.2v or vin≤ 0.2v?
➢ What package options are available for the 80ns speed version of the p4c164l in the industrial temperature range?
➢ What is the minimum vcc voltage required for data retention (vdr) as specified in the data sheet?
This document is a datasheet for the Cypress P4C164L, a low-power 8K x 8 static CMOS RAM. Here's a summary of the key information:
Key Features:
️· Capacity: 8K x 8 (64K bits)
️· Technology: Static CMOS
️· Power: Low power consumption
️· Operation: Single 3.3V or 5V supply
️· Speed: Available in 80ns and 100ns access times
️· Packages: Plastic DIP (300mil & 600mil) and Plastic SOP (450mil)
️· Operating Temperature: Commercial and Industrial temperature ranges
️· Data Retention: Functions with VCC as low as 2.0V.
️· Write Cycle: Byte write capability
Important Electrical Characteristics:
️· VCC: 3.3V or 5V
️· Access Time: 80ns or 100ns
️· Operating Current: (varies based on speed & VCC)
️· Standby Current: Very low standby current
Key Sections in the Datasheet:
️· Functional Description: Explains the RAM's operation.
️· DC Characteristics: Defines voltage and current requirements.
️· Timing Diagrams: Illustrates read and write timing.
️· AC Characteristics: Specifies AC timing parameters.
️· Package Information: Provides dimensions for different packages.
️· Ordering Information: Lists available part numbers.
️· Data Retention Characteristics: Information regarding data retention with minimal voltage applied.
Overall:
The datasheet provides all the necessary information for engineers to properly design and use the P4C164L in their applications. It includes electrical characteristics, timing diagrams, and package information to ensure successful implementation.
Key Features:
️· Capacity: 8K x 8 (64K bits)
️· Technology: Static CMOS
️· Power: Low power consumption
️· Operation: Single 3.3V or 5V supply
️· Speed: Available in 80ns and 100ns access times
️· Packages: Plastic DIP (300mil & 600mil) and Plastic SOP (450mil)
️· Operating Temperature: Commercial and Industrial temperature ranges
️· Data Retention: Functions with VCC as low as 2.0V.
️· Write Cycle: Byte write capability
Important Electrical Characteristics:
️· VCC: 3.3V or 5V
️· Access Time: 80ns or 100ns
️· Operating Current: (varies based on speed & VCC)
️· Standby Current: Very low standby current
Key Sections in the Datasheet:
️· Functional Description: Explains the RAM's operation.
️· DC Characteristics: Defines voltage and current requirements.
️· Timing Diagrams: Illustrates read and write timing.
️· AC Characteristics: Specifies AC timing parameters.
️· Package Information: Provides dimensions for different packages.
️· Ordering Information: Lists available part numbers.
️· Data Retention Characteristics: Information regarding data retention with minimal voltage applied.
Overall:
The datasheet provides all the necessary information for engineers to properly design and use the P4C164L in their applications. It includes electrical characteristics, timing diagrams, and package information to ensure successful implementation.
| Part No. | P4C164L-100P3CLF |
| Manufacturer | PYRAMID |
| Size | 112 Kbytes |
| Pages | 11 pages |
| Description | LOW POWER 8K x 8 STATIC CMOS RAM |
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