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LPV821 Folha de dados(PDF) 4 Page - Texas Instruments |
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LPV821 Folha de dados(HTML) 4 Page - Texas Instruments |
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4 / 18 page ![]() 4 LPV821 SNOSD36 – AUGUST 2017 www.ti.com Product Folder Links: LPV821 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should be current limited to 10 mA or less. (3) Short-circuit to ground, one amplifier per package. 7 Specifications 7.1 Absolute Maximum Ratings See (1) MIN MAX UNIT Voltage Supply, VS = (V+) - (V–) -0.3 4 V Input/Output Pin Voltage(2) (V–) - 0.3 (V+) + 0.3 Differential Input Voltage +IN - (-IN)(2) - 0.3 + 0.3 Current Signal input terminals(2) –10 10 mA Output short-circuit(3) Continuous Continuous Junction temperature 150 °C Operating ambient temperature –40 125 Storage temperature, Tstg –65 150 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±250 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT Supply voltage VS = (V+) - (V–) 1.7 3.6 V Specified temperature –40 125 °C 7.4 Thermal Information THERMAL METRIC LPV821 UNIT DBV (SOT) 5 PINS RθJA Junction-to-ambient thermal resistance 218.4 °C/W RθJC(top) Junction-to-case (top) thermal resistance 101.3 °C/W RθJB Junction-to-board thermal resistance 52.9 °C/W ψJT Junction-to-top characterization parameter 18.9 °C/W ψJB Junction-to-board characterization parameter 52.4 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W |
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