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MB90F548GPF Folha de dados(PDF) 59 Page - fujitsu semiconductor |
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MB90F548GPF Folha de dados(HTML) 59 Page - fujitsu semiconductor |
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59 / 67 page ![]() MB90540/540G/545/545G Series 59 6. Flash Memory Program/Erase Characteristics Parameter Condition Value Units Remarks Min Typ Max Sector erase time TA = + 25 °C VCC = 5.0 V 1 15 s Excludes 00H programming prior erasure Chip erase time 5 s MB90F543/F543G (S) / F548G (S) /F548GL (S) Excludes 00H programming prior erasure 7 s MB90F549/F549G (S) / F546G (S) Word (16 bit width) programming time 16 3,600 µs Excludes system-level overhead Erase/Program cycle 10,000 cycle |
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