TGS2353

DC – 18 GHz High Power SPDT Switch

Preliminary Data Sheet: Rev A 06/20/11

- 2 of 10 -

Disclaimer: Subject to change without notice

© 2011 TriQuint Semiconductor, Inc.

Specifications

Absolute Maximum Ratings

Parameter

Rating

Control Voltage, Vc

- 50 V

Control Current, Ic

-1 to 5.8 mA

Power Dissipation, Pdiss

3.5 W

RF Input Power, CW, 50Ω,T = 25ºC

41 dBm

Channel Temperature, Tch

Mounting Temperature

(30 Seconds)

Storage Temperature

Operation of this device outside the parameter ranges given

above may cause permanent damage. These are stress

ratings only, and functional operation of the device at these

conditions is not implied.

Recommended Operating Conditions

Parameter

Min

Typical

Max

Units

Vc1

-40 / 0

V

Vc2

0 / -40

V

Ic1 / Ic2

-0.3 to 0.1

mA

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating

conditions.

Electrical Specifications

Test conditions unless otherwise noted: 25ºC,

Vc1 = -40/0 V, Vc2 = 0/-40 V, see Function Table at Application Circuit on page

Parameter

Min

Typical

Max

Units

Operational Frequency Range

DC

18

GHz

Control Current (Ic1/ Ic2)

-0.5

0.1

mA

Insertion Loss (On-State)

< 1.5

dB

Input Return Loss – On-State (Common Port RL)

15

dB

Output Return Loss – On-State (Switched Port RL)

15

dB

Isolation (Off-State)

-30

dB

Output Return Loss – Off-Sate (Isolated Port RL)

2.5

dB

40

dBm

Insertion Loss Temperature Coefficient

-0.003

dB/°C

Switching Speed - On

31

ns

Switching Speed - Off

18

ns

1/ The Input Power will be reduced if < 10 MHz.