TGS2353

DC – 18 GHz High Power SPDT Switch

Bond Pad Description

1

2 3

4

5

6

7

Bond Pad

Symbol

Description

1

RF In

Input, matched to 50 ohms, DC coupled

2, 7

Vc2

Control voltage #2; can be biased from either side (bond pad 2 or bond pad 7), and non-

biased bond pad can be left opened; see Application Circuit on page 5 as an example

3, 6

Vc1

Control voltage #1; can be biased from either side (bond pad 3 or bond pad 6), and non-

biased bond pad can be left opened; see Application Circuit on page 5 as an example

4

RF Out1

Output #1, matched to 50 ohms, DC coupled

5

RF Out2

Output #2, matched to 50 ohms, DC coupled

Preliminary Data Sheet: Rev A 06/20/11

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Disclaimer: Subject to change without notice

© 2011 TriQuint Semiconductor, Inc.