AN557 datasheet(1/52 Pages) STMICROELECTRONICS

Nome de Peças	AN557

Descrição Electrónicos	EASY APPLICATION DESIGN WITH THE L4970A

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

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AN557

APPLICATION NOTE

November 2003

THE TECHNOLOGY

The technology architecture is based on the vertical DMOS silicon gate process that allows a channel

length of 1.5 micron ; using a junction isolation technique it has been possible to mix on the same chip

Bipolar and CMOS transistors along with the DMOS power components (Fig. 2). Figure 1 shows how this

process brings a rapid increase in power IC complexity compared to conventional bipolar technology. In

the 70’s class B circuits and DC circuits allowed output power in the range of 70W. By 1980, with the in-

troduction of switching techniques in power ICs, output powers up to 200W were reached ; with BCD tech-

nology the output power increased up to 400W.

EASY APPLICATION DESIGN WITH THE L4970A,

MONOLITHIC DC-DC CONVERTERS FAMILY

The L497XA series of high current switching regulator ICs exploit Multipower-BCD technology to

achieve very high output currents with low power dissipation – up to 10A in the Multiwatt power package

and 3.5A in a DIP package .

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