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IRHN7450SE Folha de dados(PDF) 1 Page - International Rectifier |
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IRHN7450SE Folha de dados(HTML) 1 Page - International Rectifier |
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1 / 4 page  Product Summary Part Number BVDSS RDS(on) ID IRHN7450SE 500V 0.51 Ω 12A Features: s Radiation Hardened up to 1 x 105 Rads (Si) s Single Event Burnout (SEB) Hardened s Single Event Gate Rupture (SEGR) Hardened s Gamma Dot (Flash X-Ray) Hardened s Neutron Tolerant s Identical Pre- and Post-Electrical Test Conditions s Repetitive Avalanche Rating s Dynamic dv/dt Rating s Simple Drive Requirements s Ease of Paralleling s Hermetically Sealed s Surface Mount s Lightweight Absolute Maximum Ratings Parameter IRHN7450SE Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 12 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 7.0 IDM Pulsed Drain Current 48 PD @ TC = 25°C Max. Power Dissipation 150 W Linear Derating Factor 1.2 W/K VGS Gate-to-Source Voltage ±20 V EAS Single PulseAvalanche Energy 500 mJ IAR Avalanche Current 12 A EAR RepetitiveAvalanche Energy 15 mJ dv/dt Peak Diode Recovery dv/dt 3.5 V/ns TJ Operating Junction -55 to 150 TSTG StorageTemperature Range Package Mounting Surface Temperature 300 (for 5 seconds) Weight 2.6 (typical) g N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD Provisional Data Sheet No. PD-9.1313A Pre-Radiation 500 Volt, 0.51 Ω Ω Ω Ω Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE fail- ure. Additionally, under identical pre- and post-radia- tion test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal opera- tion within a few microseconds. Since the SEE pro- cess utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as volt- age control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switch- ing power supplies, motor controls, inverters, chop- pers, audio amplifiers and high-energy pulse circuits in space and weapons environments. IRHN7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR oC A Next Data Sheet Index Previous Datasheet To Order |
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