NP100P04PLG-E2-AYNote datasheet(7/9 Pages) RENESAS

Nome de Peças	NP100P04PLG-E2-AYNote

Descrição Electrónicos	SWITCHING P-CHANNEL POWER MOS FET

PDF	9 Pages

Scroll/Zoom	100%

Fabricante Electrônico	RENESAS [Renesas Technology Corp]

Página de início	http://www.renesas.com

Logo

7 / 9 page

Data Sheet D18694EJ3V0DS

NP100P04PLG

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

-75

-25

125

175

225

ID =

−50 A

Pulsed

−10 V

VGS =

−4.5 V

Tch - Channel Temperature -

°C

100

1000

10000

100000

-0.1

-1

-10

-100

VGS = 0 V

f = 1 MHz

Ciss

Coss

Crss

VDS - Drain to Source Voltage - V

SWITCHING CHARACTERISTICS

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

100

1000

10000

-0.1

-1

-10

-100

-1000

td(off)

td(on)

VDD =

−20 V

VGS =

−10 V

RG = 0

ID - Drain Current - A

-10

-20

-30

-40

100

150

200

250

300

350

-3

-6

-9

-12

VDS

VGS

ID =

−100 A

VDD =

−32 V

−20 V

−8 V

QG - Gate Charge - nC

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT

-0.01

-0.1

-1

-10

-100

-1000

0.5

1.5

VGS =

−10 V

0 V

Pulsed

VF(S-D) - Source to Drain Voltage - V

100

1000

-0.1

-1

-10

-100

di/dt =

−100 A/μs

VGS = 0 V

IF - Diode Forward Current - A

NP100P04PLG-E2-AYNote Folha de dados(PDF) 7 Page - Renesas Technology Corp

NP100P04PLG-E2-AYNote Folha de dados(HTML) 7 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9

Folha de dados Download

Ligação URL