NP100P04PLG-E2-AYNote datasheet(6/9 Pages) RENESAS

Nome de Peças	NP100P04PLG-E2-AYNote

Descrição Electrónicos	SWITCHING P-CHANNEL POWER MOS FET

PDF	9 Pages

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Fabricante Electrônico	RENESAS [Renesas Technology Corp]

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Data Sheet D18694EJ3V0DS

NP100P04PLG

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS

-50

-100

-150

-200

-250

-300

-0.5

-1

-1.5

-2

VGS =

−10 V

Pulsed

−4.5 V

VDS - Drain to Source Voltage - V

-0.001

-0.01

-0.1

-1

-10

-100

-1000

-0

-1

-2

-3

-4

-5

VDS =

−10 V

Pulsed

Tch =

−55°C

−25°C

°C

125

°C

150

°C

175

°C

VGS - Gate to Source Voltage - V

GATE TO SOURCE THRESHOLD VOLTAGE vs.

CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

-0.5

-1

-1.5

-2

-2.5

-3

-75

-25

125

175

225

VDS =

−10 V

ID =

−1 mA

Tch - Channel Temperature -

°C

0.1

100

1000

-0.1

-1

-10

-100

-1000

VDS =

−10 V

Pulsed

Tch =

−55°C

−25°C

°C

125

°C

150

°C

175

°C

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

-1

-10

-100

-1000

−10 V

Pulsed

VGS =

−4.5 V

ID - Drain Current - A

-5

-10

-15

-20

Pulsed

ID =

−100 A

−50 A

−20 A

VGS - Gate to Source Voltage - V

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