NP100P04PLG-E2-AYNote datasheet(4/9 Pages) RENESAS

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Data Sheet D18694EJ3V0DS

NP100P04PLG

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

IDSS

VDS =

−40 V, VGS = 0 V

−10

μA

Gate Leakage Current

IGSS

VGS = m20 V, VDS = 0 V

m10

μA

Gate to Source Threshold Voltage

VGS(th)

VDS =

−10 V, ID = −1 mA

−1.0

−1.6

−2.5

Forward Transfer Admittance

Note

| yfs |

VDS =

−10 V, ID = −50 A

Drain to Source On-state Resistance

Note

RDS(on)1

VGS =

−10 V, ID = −50 A

2.8

3.7

RDS(on)2

VGS =

−4.5 V, ID = −50 A

3.4

5.1

Input Capacitance

Ciss

VDS =

−10 V,

15100

Output Capacitance

Coss

VGS = 0 V,

2400

Reverse Transfer Capacitance

Crss

f = 1 MHz

1130

Turn-on Delay Time

td(on)

VDD =

−20 V, ID = −50 A,

Rise Time

VGS =

−10 V,

Turn-off Delay Time

td(off)

RG = 0

300

Fall Time

100

Total Gate Charge

VDD =

−32 V,

320

Gate to Source Charge

QGS

VGS =

−10 V,

Gate to Drain Charge

QGD

ID =

−100 A

Body Diode Forward Voltage

Note

VF(S-D)

IF =

−100 A, VGS = 0 V

0.91

1.5

Reverse Recovery Time

trr

IF =

−100 A, VGS = 0 V,

Reverse Recovery Charge

Qrr

di/dt =

−100 A/

μs

123

Note Pulsed test PW

≤ 350

μs, Duty Cycle ≤ 2%

TEST CIRCUIT 1 AVALANCHE CAPABILITY

RG = 25

VDD

VGS =

−20 → 0 V

BVDSS

IAS

VDS

Starting Tch

VDD

D.U.T.

TEST CIRCUIT 3 GATE CHARGE

TEST CIRCUIT 2 SWITCHING TIME

PG.

VGS(−)

D.U.T.

VDD

τ = 1 s

Duty Cycle

≤ 1%

VGS

Wave Form

VDS

Wave Form

VGS(−)

10%

90%

VGS

10%

VDS(−)

90%

td(on)

td(off)

10%

VDS

ton

toff

PG.

D.U.T.

VDD

IG =

−2 mA

−

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