MCP87130 datasheet(2/18 Pages) MICROCHIP

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MCP87130

DS25159A-page 2

 2013 Microchip Technology Inc.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

VDS.......................................................................+25V

VGS........................................................... +10.0V / -8V

ID, Continuous ..............................................................

8L 5x6-PDFN ............................. 54A, TC = +25°C

8L 3.3x3.3-PDFN ....................... 42A, TC = +25°C

PD.................................................................................

8L 5x6-PDFN ........................... 2.2W, TA = +25°C

8L 3.3x3.3-PDFN .......... ...........1.8W, TA = +25°C

TJ, TSTG.............................................. -55˚C to +150˚C

EAS Avalanche Energy ....................................... 50 mJ

ID = 10A, L= 1mH, RG =25Ω

† Notice:

Stresses above those listed under

“Maximum Ratings” may cause permanent damage to

the device. This is a stress rating only and functional

operation of the device at those or any other conditions

above those indicated in the operational sections of this

specification is not intended. Exposure to maximum

rating conditions for extended periods may affect

device reliability.

DC ELECTRICAL CHARACTERISTICS

Electrical Characteristics:

Unless otherwise indicated, TA = +25°C

Parameters

Sym

Min

Typ

Max

Units

Conditions

Static Characteristics

Drain-to-Source

Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250 µA

Drain-to-Source Leakage Current

IDSS

——

µA

VGS = 0V, VDS = 20V

Gate-to-Source Leakage Current

IGSS

——

100

VDS = 0V, VGS = 10V/-8V

Gate-to-Source Threshold Voltage

VGS(TH)

1.1

1.35

1.7

VDS = VGS, ID = 250 µA

Drain-to-Source On Resistance

RDS(ON)

—

17.3

—



VGS = 3.3V, ID = 10A

—

13.8

16.5



VGS = 4.5V, ID = 10A

—11.3

13.5



VGS = 10V, ID = 10A

Transconductance

gfs

—40—

VDS = 12.5V, ID = 10A

Dynamic Characteristics

Input Capacitance

CISS

—400

—

VGS = 0V, VDS = 12.5V, f = 1 MHz

Output Capacitance

COSS

—200

—

VGS = 0V, VDS = 12.5V, f = 1 MHz

Reverse Transfer Capacitance

CRSS

—60—

VGS = 0V, VDS = 12.5V, f = 1 MHz

Total Gate Charge

—5.5

VDS = 12.5V, ID = 10A, VGS = 4.5V

Gate-to-Drain Charge

QGD

—2.6

—

VDS = 12.5V, ID = 10A

Gate-to-Source Charge

QGS

—0.9

—

VDS = 12.5V, ID = 10A

Gate Charge at VGS(TH)

QG(TH)

—0.6

—

VDS = 12.5V, ID = 10A

Output Charge

QOSS

—3.7

—

VDS = 12.5V, VGS = 0

Turn-On Delay Time

td(on)

—2.2

—

VDS = 12.5V, VGS = 4.5V,

ID = 10A, RG = 2

Rise Time

—5.4

—

VDS = 12.5V, VGS = 4.5V,

ID = 10A, RG = 2

Turn-Off Delay Time

td(off)

—4.2

—

VDS = 12.5V, VGS = 4.5V,

ID = 10A, RG = 2

Fall Time

—2.1

—

VDS = 12.5V, VGS = 4.5V,

ID = 10A, RG = 2

Series Gate Resistance

—1.7

—



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