MCP87130 datasheet(3/18 Pages) MICROCHIP

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 2013 Microchip Technology Inc.

DS25159A-page 3

MCP87130

Diode Characteristics

Diode Forward Voltage

VFD

—0.8

IS = 10A, VGS = 0V

Reverse Recovery Charge

QRR

—7

—

IS = 10A, di/dt = 300 A/µs

Reverse Recovery Time

trr

—9.5

—

IS = 10A, di/dt = 300 A/µs

Avalanche Characteristics

Avalanche Energy

EAS

4.5

—

ID = 3A, L = 1 mH,

RG = 25

TEMPERATURE CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, TA = +25°C

Parameters

Sym

Min

Typ

Max

Units

Conditions

Temperature Ranges

Operating Junction Temperature Range

-55

—

150

°C

Storage Temperature Range

-55

—

150

°C

Package Thermal Resistances

Thermal Resistance Junction-to-X, 8L 5x6-PDFN

RθJX

——

°C/W

Note 1

Thermal Resistance Junction-to-Case, 8L 5x6-PDFN

RθJC

——

2.1

°C/W

Note 2

Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN

RθJX

——

°C/W

Note 1

Thermal Resistance Junction-to-Case,

8L 3.3x3.3-PDFN

RθJC

——

3.5

°C/W

Note 2

Note 1:

RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of

2 oz. copper. This characteristic is dependent on user’s board design.

RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.

DC ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Characteristics:

Unless otherwise indicated, TA = +25°C

Parameters

Sym

Min

Typ

Max

Units

Conditions

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