MCP87130 datasheet(1/18 Pages) MICROCHIP

Nome de Peças	MCP87130

Descrição Electrónicos	High-Speed N-Channel Power MOSFET

PDF	18 Pages

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Fabricante Electrônico	MICROCHIP [Microchip Technology]

Página de início	http://www.microchip.com

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 2013 Microchip Technology Inc.

DS25159A-page 1

MCP87130

Features:

• Low Drain-to-Source On Resistance (RDS(ON))

• Low Total Gate Charge (QG) and Gate-to-Drain

Charge (QGD)

• Low Series Gate Resistance (RG)

• Capable of Short Dead-Time Operation

• RoHS Compliant

Applications:

• Point-of-Load DC-DC Converters

• High Efficiency Power Management in Servers,

Networking, and Automotive Applications

Description:

The MCP87130 is an N-Channel power MOSFET in a

popular PDFN 5 mm x 6 mm package as well as a

PDFN

3.3 mm x 3.3 mm

package.

Advanced

packaging and silicon processing technologies allow

the MCP87130 to achieve a low QG for a given RDS(ON)

value, resulting in a low Figure of Merit (FOM).

Combined with low RG, the low FOM of the MCP87130

allows high efficiency power conversion with reduced

switching and conduction losses.

Package Type

S

G

S

D

1

2

3

4

5

6

7

8

PDFN 5 x 6

PDFN 3.3 x 3.3

Product Summary Table:

Unless otherwise indicated, TA = +25˚C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Operating Characteristics

Drain-to-Source Breakdown Voltage

BVDSS

25

—

V

VGS = 0V, ID = 250 µA

Gate-to-Source Threshold Voltage

VGS(TH)

1.1

1.35

1.7

V

VDS = VGS, ID = 250 µA

Drain-to-Source On Resistance

RDS(ON)

—

13.8

16.5

mΩ

VGS = 4.5V, ID = 10A

—

11.3

13.5

mΩ

VGS = 10V, ID = 10A

Total Gate Charge

QG

—5.5

8

nC

VDS = 12.5V, ID = 10A,

VGS = 4.5V

Gate-to-Drain Charge

QGD

—2.6

—

nC

VDS = 12.5V, ID = 10A

Series Gate Resistance

RG

—1.7

—

Ω

Thermal Characteristics

Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN

RθJX

——

66

°C/W Note 1

Thermal Resistance Junction-to-Case, 8L 3.3x3.3-PDFN

RθJC

——

3.5

°C/W Note 2

Thermal Resistance Junction-to-X, 8L 5x6-PDFN

RθJX

——

56

°C/W Note 1

Thermal Resistance Junction-to-Case, 8L 5x6-PDFN

RθJC

——

2.1

°C/W Note 2

Note

1:

RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of 2 oz. cop-

per. This characteristic is dependent on user’s board design.

2:

RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.

High-Speed N-Channel Power MOSFET

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