KM4132G271B datasheet(23/51 Pages) SAMSUNG

Nome de Peças	KM4132G271B

Descrição Electrónicos	128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL

PDF	51 Pages

Scroll/Zoom	100%

Fabricante Electrônico	SAMSUNG [Samsung semiconductor]

Página de início	http://www.samsung.com/Products/Semiconductor

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23 / 51 page

KM4132G271B

CMOS SGRAM

- 23

Rev. 2.4 (May 1998)

1. tRDL : 1 CLK, Last Data in to Row Precharge.

2. tBDL : 1 CLK, Last Data in to Burst Stop Delay.

3. Number of valid output data after Row precharge or burst stop : 1, 2 for CAS latency= 2, 3 respectiviely.

4. PRE : Both banks precharge if necessary.

MRS can be issued only at all bank precharge state.

8. Burst Stop & Precharge Interrupt

CLK

CMD

PRE

1) Write Interrupted by Precharge (BL=4)

tRDL Note 1

3) Read Interrupted by Precharge (BL=4)

CLK

CMD

DQ(CL2)

DQ(CL3)

PRE

Note 3

9. MRS & SMRS

CLK

SMRS

2) Special Mode Register Set

CLK

CMD

STOP

2) Write Burst Stop (Full Page Only)

4) Read Burst Stop (Full Page Only)

CLK

CMD

DQ(CL2)

DQ(CL3)

STOP

Note 3

1CLK

CMD

DQM

tBDL

*Note :

CLK

PRE

1) Mode Register Set

MRS ACT

Note 4

tRP

1CLK

CMD

ACT SMRS SMRS

1CLK

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