NTZD3152PT1G datasheet(3/5 Pages) ONSEMI

Nome de Peças	NTZD3152PT1G

Descrição Electrónicos	Small Signal MOSFET ??0 V, ??30 mA, Dual P?묬hannel with ESD Protection, SOT??63

PDF	5 Pages

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

Página de início	http://www.onsemi.com

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NTZD3152P

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

−1 V

100°C

0.6

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0.4

0.2

Figure 1. On−Region Characteristics

0.5

1.5

2.5

0.8

0.4

0.2

Figure 2. Transfer Characteristics

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.5

0.7

0.6

0.4

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.1

1.0

0.8

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−ID, DRAIN CURRENT (AMPS)

−50

−25

1.4

1.2

0.8

0.6

125

100

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

TJ = −55°C

ID = −0.43 A

TJ = 25°C

1.4

0.5

150

TJ = 25°C

ID = −0.43 A

VGS = −4.5 V

25°C

1.6

VGS = −1.8 V

−1.2 V

−1.4 V

−1.6 V

1.3

0.6

1.1

VGS = −2.5 V

710

VDS ≥ −10 V

0.8

0.2

0.3

0.4

0.9

VGS = −1.8 V

VGS = −2 V

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS = 0 V

TJ = 150°C

TJ = 100°C

100

1000

10000

610

0.45

0.65

0.55

0.75

0.7

1.0

1.2

0.5

0.6

0.7

0.8

0.9

0.8

0.6

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