NTZD3152PT1G datasheet(2/5 Pages) ONSEMI

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NTZD3152P

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−20

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

TJ = 25°C

−1.0

VDS = −16 V

TJ = 125°C

−2.0

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = "4.5 V

"2.0

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −250 mA

−0.45

−1.0

Negative Threshold

Temperature Coefficient

VGS(TH)/TJ

−1.9

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = −4.5 V, ID = −430 mA

0.5

0.9

VGS = −2.5 V, ID = −300 mA

0.6

1.2

VGS = −1.8 V, ID = −150 mA

1.0

2.0

Forward Transconductance

gFS

VDS = −10 V, ID = −430 mA

1.0

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = −16 V

105

175

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

Total Gate Charge

QG(TOT)

VGS = −4.5 V, VDS = −10 V,

ID = −215 mA

1.7

2.5

Threshold Gate Charge

QG(TH)

0.1

Gate−to−Source Charge

QGS

0.3

Gate−to−Drain Charge

QGD

0.4

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(on)

VGS = −4.5 V, VDD = −10 V,

ID = −215 mA, RG = 10 W

Rise Time

Turn−Off Delay Time

td(off)

Fall Time

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = −350 mA

TJ = 25°C

−0.8

−1.2

Reverse Recovery Time

tRR

VGS = 0 V, dISD/dt = 100 A/ms,

IS = −350 mA

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

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