NTZD3152PT1G datasheet(1/5 Pages) ONSEMI

Nome de Peças	NTZD3152PT1G

Descrição Electrónicos	Small Signal MOSFET ??0 V, ??30 mA, Dual P?묬hannel with ESD Protection, SOT??63

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

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March, 2010 − Rev. 2

1

Publication Order Number:

NTZD3152P/D

NTZD3152P

Small Signal MOSFET

−20 V, −430 mA, Dual P−Channel

with ESD Protection, SOT−563

Features

• Low RDS(on) Improving System Efficiency

• Low Threshold Voltage

• ESD Protected Gate

• Small Footprint 1.6 x 1.6 mm

• These are Pb−Free Devices

Applications

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Management

• Cell Phones, Digital Cameras, PDAs, Pagers, etc.

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

Parameter

Symbol Value

Unit

Drain−to−Source Voltage

VDSS

−20

V

Gate−to−Source Voltage

VGS

±6.0

V

Continuous Drain Current

(Note 1)

Steady

State

TA = 25°C

ID

−430

mA

TA = 85°C

−310

Power Dissipation

(Note 1)

Steady State

PD

250

mW

Continuous Drain Current

(Note 1)

t v 5 s

TA = 25°C

ID

−455

mA

TA = 85°C

−328

Power Dissipation

(Note 1)

t v 5 s

PD

280

mW

Pulsed Drain Current

tp = 10 ms

IDM

−750

mA

Operating Junction and Storage Temperature

TJ,

TSTG

−55 to

150

°C

Source Current (Body Diode)

IS

−350

mA

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Ambient – Steady State (Note 1)

RqJA

500

°C/W

Junction−to−Ambient – t v 5 s (Note 1)

447

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in. sq. pad size

(Cu. area = 1.127 in. sq. [1 oz.] including traces).

http://onsemi.com

V(BR)DSS

RDS(on) Typ

ID Max

−20 V

0.5 W @ −4.5 V

0.6 W @ −2.5 V

−430 mA

1.0 W @ −1.8 V

Device

Package

Shipping†

ORDERING INFORMATION

NTZD3152PT1G SOT−563

(Pb−Free) 4000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Top View

D1

G2

S2

S1

G1

6

5

4

1

2

3

D2

PINOUT: SOT−563

P−Channel

MOSFET

NTZD3152PT5G SOT−563

(Pb−Free)

8000 / Tape & Reel

D1

S1

G1

D2

S2

G2

TU

= Specific Device Code

M

= Date Code

G

= Pb−Free Package

TU M G

G

1

MARKING DIAGRAM

1

6

SOT−563−6

CASE 463A

(Note: Microdot may be in either location)

NTZD3152PT1H

NTZD3152PT5H

Nº de peça semelhante - NTZD3152PT1G

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