CY8CTST110
Document Number: 001-46931 Rev. *B
Page 14 of 32
DC Electrical Characteristics
The below electrical characteristics are for proper CPU core and IO operation. For capacitive touchscreen electrical characteristics,
refer to the touchscreen user module data sheet.
DC Chip-Level Specifications
Table 8 lists the guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V and -40°C
≤ T
A ≤ 85°C, 3.0V to 3.6V and -40°C ≤ TA ≤ 85°C, or 2.7V to 3.0V and -40°C ≤ TA ≤ 85°C, respectively. Typical parameters apply to
5V, 3.3V, or 2.7V at 25°C. These are for design guidance only.
Table 8. DC Chip-Level Specifications
Symbol
Description
Min
Typ
Max
Units
Notes
Vdd
Supply Voltage
2.40
–
5.25
V
See Table 17 on page 18.
IDD
Supply Current, IMO = 24 MHz
–
3
4
mA
Conditions are Vdd = 5.0V,
TA = 25
oC, CPU = 3 MHz, 48 MHz
disabled. VC1 = 1.5 MHz,
VC2 = 93.75 kHz, VC3 = 0.366 kHz.
IDD3
Supply Current, IMO = 6 MHz using SLIMO
mode.
–
1.2
2
mA
Conditions are Vdd = 3.3V,
TA = 25
oC, CPU = 3 MHz, clock
doubler disabled. VC1 = 375 kHz,
VC2 = 23.4 kHz, VC3 = 0.091 kHz.
IDD27
Supply Current, IMO = 6 MHz using SLIMO
mode.
–
1.1
1.5
mA
Conditions are Vdd = 2.55V,
TA = 25
oC, CPU = 3 MHz, clock
doubler disabled. VC1 = 375 kHz,
VC2 = 23.4 kHz, VC3 = 0.091 kHz.
ISB27
Sleep (Mode) Current with POR, LVD, Sleep
Timer, WDT, and internal slow oscillator active.
Mid temperature range.
–
2.6
4.
μA
Vdd = 2.55V, 0oC
≤ T
A ≤ 40
oC.
ISB
Sleep (Mode) Current with POR, LVD, Sleep
Timer, WDT, and internal slow oscillator active.
–
2.8
5
μA
Vdd = 3.3V, -40oC
≤ T
A ≤ 85
oC.
VREF
Reference Voltage (Bandgap)
1.28
1.30
1.32
V
Trimmed for appropriate Vdd.
Vdd = 3.0V to 5.25V.
VREF27
Reference Voltage (Bandgap)
1.16
1.30
1.33
V
Trimmed for appropriate Vdd. Vdd =
2.4V to 3.0V.
AGND
Analog Ground
VREF
- 0.003
VREF
VREF
+ 0.003
V
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