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HD64F2149YV Folha de dados(PDF) 802 Page - Renesas Technology Corp |
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HD64F2149YV Folha de dados(HTML) 802 Page - Renesas Technology Corp |
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802 / 1075 page ![]() Section 25 Electrical Characteristics Rev. 3.00 Jan 18, 2006 page 774 of 1044 REJ09B0280-0300 Item Symbol Min Typ Max Unit Test Conditions Three-state leakage current (off state) Ports 1 to 6 Ports 8, 9, A* 8, B (include ports C to G* 8 for H8S/2169) I TSI —— 1.0 µA V in = 0.5 to V CC – 0.5 V, V in = 0.5 to V CCB – 0.5 V Ports 1 to 3 –I P 5 — 150 µA Ports 6 (P6PUE = 0), B 30 — 300 µA Input pull-up MOS current Ports A* 8 (include ports C to G* 8 for H8S/2169) 30 — 600 µA V in = 0 V, V CC = 2.7 V to 3.6 V, V CCB = 2.7 V to 5.5 V Port 6 (P6PUE = 1) 3 — 100 µA Input capacitance RES (4) C in — — 80 pF NMI — — 50 pF P52, P97, P42, P86, PA7 to PA2 — — 20 pF V in = 0 V, f = 1 MHz, T a = 25°C Input pins except (4) above (include ports C to G for H8S/2169) — — 15 pF Current dissipation* 9 Normal operation I CC — 30 40 mA f = 10 MHz Sleep mode — 20 32 mA f = 10 MHz Standby mode* 10 —1 5.0 µA T a ≤ 50°C — — 20.0 µA 50°C < T a During A/D, D/A conversion Al CC —1.2 2.0 mA Analog power supply current Idle — 0.01 5.0 µA AV CC = 2.0 V to 3.6 V |
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