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HD64F2149YV Folha de dados(PDF) 752 Page - Renesas Technology Corp |
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HD64F2149YV Folha de dados(HTML) 752 Page - Renesas Technology Corp |
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752 / 1075 page ![]() Section 22 ROM Rev. 3.00 Jan 18, 2006 page 724 of 1044 REJ09B0280-0300 Table 22.15 AC Characteristics when Entering Another Mode from Memory Read Mode Conditions: V CC = 3.3 V ±0.3 V, VSS = 0 V, Ta = 25°C ±5°C Item Symbol Min Max Unit Command write cycle t nxtc 20 — µs CE hold time t ceh 0 — ns CE setup time t ces 0 — ns Data hold time t dh 50 — ns Data setup time t ds 50 — ns Write pulse width t wep 70 — ns WE rise time t r — 30 ns WE fall time t f — 30 ns CE FA17 to FA0 FO7 to FO0 H'XX OE WE Other mode command write Memory read mode twep tceh tdh tds tnxtc tces Address stable Data tf tr Note: Do not enable WE and OE at the same time. Figure 22.17 Timing Waveforms when Entering Another Mode from Memory Read Mode |
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