HD64F2149YV datasheet(718/1075 Pages) RENESAS

718 / 1075 page

Section 22 ROM

Rev. 3.00 Jan 18, 2006 page 690 of 1044

REJ09B0280-0300

22.4

Overview of Flash Memory

22.4.1

Features

The features of the flash memory are summarized below.

• Four flash memory operating modes

 Program mode

 Erase mode

 Program-verify mode

 Erase-verify mode

• Programming/erase methods

The flash memory is programmed 128 bytes at a time. Erasing is performed by block erase (in

single-block units). When erasing multiple blocks, the individual blocks must be erased

sequentially. Block erasing can be performed as required on 1-kbyte, 28-kbyte, 16-kbyte, and

8-kbyte blocks.

• Programming/erase times

The flash memory programming time is 10 ms (typ.) for simultaneous 128-byte programming,

equivalent to about 80 µs (typ.) per byte, and the erase time is 100 ms (typ.) per block.

• Reprogramming capability

The flash memory can be reprogrammed up to 100 times.

• On-board programming modes

There are two modes in which flash memory can be programmed/erased/verified on-board:

 Boot mode

 User program mode

• Automatic bit rate adjustment

With data transfer in boot mode, the bit rate of the chip can be automatically adjusted to match

the transfer bit rate of the host.

• Protect modes

There are three protect modes, hardware, software, and error protect, which allow protected

status to be designated for flash memory program/erase/verify operations.

• Programmer mode

Flash memory can be programmed/erased in programmer mode, using a PROM programmer,

as well as in on-board programming mode.

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