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FDFMA2P853 Folha de dados(PDF) 2 Page - Fairchild Semiconductor

Nome de Peças FDFMA2P853
Descrição Electrónicos  Integrated P-Channel PowerTrench짰 MOSFET and Schottky Diode
PDF  7 Pages
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDFMA2P853 Folha de dados(HTML) 2 Page - Fairchild Semiconductor

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FDFMA2P853 Rev D
2 (W)
Electrical Characteristics T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = –250 A
–20
V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
ID = –250 A, Referenced to 25 C
–12
mV/ C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V,
VGS = 0 V
–1
A
IGSS
Gate–Body Leakage
VGS = ± 8 V,
VDS = 0 V
±100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = –250 A
–0.4
–0.7
–1.3
V
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 A, Referenced to 25 C
2
mV/ C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
ID = –3.0 A
VGS = –2.5 V,
ID = –2.5 A
VGS = –1.8 V,
ID = –1.0 A
VGS= –4.5 V, ID = –3.0 A, TJ=125 C
90
120
172
118
120
160
240
160
m
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
–20
A
gFS
Forward Transconductance
VDS = –5 V,
ID = –3.0 A
7
S
Dynamic Characteristics
Ciss
Input Capacitance
435
pF
Coss
Output Capacitance
80
pF
Crss
Reverse Transfer Capacitance
VDS = –10 V,
V GS = 0 V,
f = 1.0 MHz
45
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
9
18
ns
tr
Turn–On Rise Time
11
19
ns
td(off)
Turn–Off Delay Time
15
27
ns
tf
Turn–Off Fall Time
VDD = –10 V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6
6
12
ns
Qg
Total Gate Charge
4
6
nC
Qgs
Gate–Source Charge
0.8
nC
Qgd
Gate–Drain Charge
VDS = –10 V,
ID = –3.0 A,
VGS = –4.5 V
0.9
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.1
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –1.1 A
(Note 2)
–0.8
–1.2
V
trr
Diode Reverse Recovery Time
17
ns
Qrr
Diode Reverse Recovery Charge
IF = –3.0 A,
dIF/dt = 100 A/µs
6
nC
Schottky Diode Characteristics
IR
Reverse Leakage
VR = 5 V
TJ = 25 C
TJ = 125 C
9.9
2.3
50
10
A
mA
IR
Reverse Leakage
VR = 20 V
TJ = 25 C
TJ = 85 C
TJ = 125 C
9.9
0.3
2.3
100
1
10
A
mA
mA
VF
Forward Voltage
IF = 500mA
TJ = 25 C
TJ = 125 C
0.4
0.3
0.46
0.35
V
VF
Forward Voltage
IF = 1A
TJ = 25 C
TJ = 125 C
0.5
0.49
0.55
0.54
V



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