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FDFMA2P853 Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FDFMA2P853 Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
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1 / 7 page  ©200 8 Fairchild Semiconductor Corporation FDFMA2P853 Rev. D 2 (W) 1 FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal perfo rmance for it's physica l size and is well suited to linear mode applications. MOSFET: -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V RDS(ON) = 160 m @ VGS = -2.5 V RDS(ON) = 240 m @ VGS = -1.8 V Schottky: VF < 0.46 V @ 500 mA Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm RoHS Compliant Absolute Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDSS MOSFET Drain-Source Voltage -20 V VGSS MOSFET Gate-Source Voltage 8V ID Drain Current -Continuous (Note 1a) -Pulsed - 3.0 A -6 VRRM Schottky Repetitive Peak Reverse voltage 30V IO Schottky Average Forward Current (Note 1a) 1 A PD Power dissipation for Single Operation (Note 1a) Power dissipation for Single Operation (Note 1b) 1.4 W 0.7 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 oC R JA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 oC/W R JA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 R JA Thermal Resistance, Junction-to-Ambient (Note 1c) 86 R JA Thermal Resistance, Junction-to-Ambient (Note 1d) 140 Device Marking Device Reel Size Tape Width Quantity .853 FDFMA2P853 7inch 8mm 3000 units 5 1 6 2 3 4 MicroFET C A G NC D S C G S A NC D C D September 2008 September 2008 |
Nº de peça semelhante - FDFMA2P853_08 |
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Descrição semelhante - FDFMA2P853_08 |
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