FDFMA2P853_08 datasheet(3/7 Pages) FAIRCHILD

Nome de Peças	FDFMA2P853

Descrição Electrónicos	Integrated P-Channel PowerTrench짰 MOSFET and Schottky Diode

PDF	7 Pages

Scroll/Zoom	100%

Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

Página de início	http://www.fairchildsemi.com

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3 / 7 page

FDFMA2P853 Rev. D

2 (W)

Electrical Characteristics T

A = 25°C unless otherwise noted

Notes:

1. R JA is determined with the device mounted on a 1 in

2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

JC is guaranteed by

design while R JA is determined by the user's board design.

(a) MOSFET R JA = 86°C/W when mounted on a 1 in

2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB

(b) MOSFET R JA = 173°C/W when mounted on a minimum pad of 2 oz copper

2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB

(d) Schottky R JA = 140°C/W when mounted on a minimum pad of 2 oz copper

a) 86oC/W

when

mounted

on a 1in2

pad of 2 oz

copper

b) 173oC/W

when

mounted on

a minimum

pad of

2 oz copper

Scale 1: 1 on letter size paper

2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%

c) 86oC/W

when

mounted

on a 1in2

pad of 2 oz

copper

d) 140oC/W

when

mounted on

a minimum

pad of

2 oz copper

FDFMA2P853 Folha de dados(PDF) 3 Page - Fairchild Semiconductor