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S32K310 Folha de dados(PDF) 76 Page - NXP Semiconductors |
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S32K310 Folha de dados(HTML) 76 Page - NXP Semiconductors |
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76 / 164 page ![]() Table 29. 5.0V (4.5V - 5.5V) GPIO Output AC Specification...continued Symbol Description Min Typ Max Unit Condition Spec Number TR_TF_50_SP 5.0V Standard Plus GPIO rise/fall time [1] [2][3][4] 3.4 — 11 ns DSE=1 CL (max) =50pF — TR_TF_50_M 5.0V Medium GPIO rise/fall time [1][2][3] 1.8 — 8.2 ns DSE=0, SRE=0 CL (max) = 25pF — TR_TF_50_M 5.0V Medium GPIO rise/fall time [1][2][3] 2.5 — 9.8 ns DSE=0, SRE=1 CL (max) = 25pF — TR_TF_50_M 5.0V Medium GPIO rise/fall time [1][2][3] 0.7 — 4.5 ns DSE=1, SRE=0 CL (max) = 25pF — TR_TF_50_M 5.0V Medium GPIO rise/fall time [1][2][3] 1.8 — 7.2 ns DSE=1, SRE=1 CL (max) = 25pF — TR_TF_50_M 5.0V Medium GPIO rise/fall time [1][2][3][4] 3.95 — 13.2 ns DSE=0, SRE=0 CL (max) = 50pF — TR_TF_50_M 5.0V Medium GPIO rise/fall time [1][2][3][4] 4.3 — 13.8 ns DSE=0, SRE=1 CL (max) = 50pF — TR_TF_50_M 5.0V Medium GPIO rise/fall time [1][2][3][4] 1.6 — 7.1 ns DSE=1, SRE=0 CL (max) = 50pF — TR_TF_50_M 5.0V Medium GPIO rise/fall time [1][2][3][4] 2.7 — 9.6 ns DSE=1, SRE=1 CL (max) = 50pF — TR_TF_50_F 5.0V Fast GPIO rise/ fall time [1][2][3] 0.4 — 3.15 ns DSE=0, SRE=0 CL (max) = 25pF — TR_TF_50_F 5.0V Fast GPIO rise/ fall time [1][2][3] 1.5 — 6.7 ns DSE=0, SRE=1 CL (max) = 25pF — TR_TF_50_F 5.0V Fast GPIO rise/ fall time [1][2][3] 0.3 — 2.02 ns DSE=1, SRE=0 CL (max) = 25pF — TR_TF_50_F 5.0V Fast GPIO rise/ fall time [1][2][3] 0.9 — 4.85 ns DSE=1, SRE=1 CL (max) = 25pF — TR_TF_50_F 5.0V Fast GPIO rise/ fall time [1][2][3][4] 1.0 — 5.8 ns DSE=0, SRE=0 CL (max) = 50pF — TR_TF_50_F 5.0V Fast GPIO rise/ fall time [1][2][3][4] 1.9 — 8.5 ns DSE=0, SRE=1 CL (max) = 50pF — TR_TF_50_F 5.0V Fast GPIO rise/ fall time [1][2][3][4] 0.9 — 3.0 ns DSE=1, SRE=0 CL (max) = 50pF — TR_TF_50_F 5.0V Fast GPIO rise/ fall time [1][2][3][4] 1.3 — 6.1 ns DSE=1, SRE=1 CL (max) = 50pF — [1] GPIO rise/fall time specifications are derived from simulation model for the defined operating points (between 20% and 80% of VDD_HV_A/B level). Actual application rise/fall time should be extracted from IBIS model simulations with the microcontroller models and application PCB. [2] GPIO output transistion time information can be obtained from the device IBIS model. IBIS models are recommended for system level simulations, as discrete values for I/O transition times are not representative of the I/O pad behavior when connected to an actual transmission line load. [3] I/O timing specifications are valid for the un-terminated 50ohm transmission line reference load given in the figure below. A lumped 8pF load (typical) is assumed at the end of a 5 inch microstrip trace on standard FR4 with approximately 3.3pF/inch. For best signal integrity, the series resistance in the transmission line should be matched closely to the selected output resistance (ROUT_*) of the I/O pad. [4] Output timing valid for maximum external load C L = 50pF (includes PCB trace, package trace, and external device input load). NXP Semiconductors S32K3XX S32K3xx Data Sheet S32K3XX All information provided in this document is subject to legal disclaimers. © 2025 NXP B.V. All rights reserved. Product data sheet Rev. 13 — 12 November 2025 Document feedback 76 / 164 |
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