1997 Aug 13

3

Philips Semiconductors

Product specification

Silicon diffused power transistors

BUW13F; BUW13AF

THERMAL CHARACTERISTICS

Notes

1. Mounted without heatsink compound and 30

±5 N force on centre of package.

2. Mounted with heatsink compound and 30

±5 N force on centre of package.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. Mounted without heatsink compound and 30

±5 N force on centre of package.

2. Mounted with heatsink compound and 30

±5 N force on centre of package.

ISOLATION CHARACTERISTICS

Note

1. Repetitive peak operation with RH

≤ 65% under clean and dust-free conditions.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to external heatsink note 1

3.4

K/W

note 2

2.5

K/W

thermal resistance from junction to ambient

35

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-emitter peak voltage

BUW13F

−

850

V

BUW13AF

−

1000

V

collector-emitter voltage

open base

BUW13F

−

400

V

BUW13AF

−

450

V

collector saturation current

BUW13F

−

10

A

BUW13AF

−

8A

collector current (DC)

see Figs 3 and 4

−

15

A

collector current (peak value)

−

30

A

base current (DC)

−

6A

base current (peak value)

−

9A

total power dissipation

−

37

W

−

50

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

MAX.

UNIT

isolation voltage from all terminals to external heatsink (peak value); note 1 2000

V

isolation capacitance from collector to external heatsink

21

pF