BUW13F datasheet(9/16 Pages) PHILIPS

Nome de Peças	BUW13F

Descrição Electrónicos	Silicon diffused power transistors

PDF	16 Pages

Scroll/Zoom	100%

Fabricante Electrônico	PHILIPS [NXP Semiconductors]

Página de início	http://www.nxp.com

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9 / 16 page

1997 Aug 13

Philips Semiconductors

Product speciﬁcation

Silicon diffused power transistors

BUW13F; BUW13AF

Fig.10 Collector-emitter saturation voltage as a

function of base current.

(1) IC =5A.

(2) IC =10A.

(3) IC =15A.

Tj =25 °C; solid line: typical values; dotted line: maximum values.

handbook, halfpage

10−2

10−1

VCEsat

(V)

IB (A)

MGB871

(1)

(2)

(3)

Fig.11 DC current gain; typical values.

Tj = 125 °C.

handbook, halfpage

MBC098

102

10−2

10−1

110

102

IC (A)

hFE

VCE = 5 V

VCC = 250 V; tp =20 µs; VIM = −6 to +8 V; tp/T = 0.01.

The values of RB and RL are selected in accordance with ICon and

IBon requirements.

handbook, halfpage

MGE244

VCC

D.U.T.

VIM

Fig.12 Test circuit resistive load.

Fig.13 Switching time waveforms with

resistive load.

tr ≤ 20 ns.

handbook, halfpage

MBB731

90%

10%

90%

10%

IB on

IB off

IC on

tr ≤30 ns

ton

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